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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2790GR
SWITCHING
N- AND P-CHANNEL POWER MOS FET
DESCRIPTION
The μ PA2790GR is N- and P-channel MOS Field Effect
PACKAGE DRAWING (Unit: mm)
Transistors designed for Motor Drive application.
8
5
N-channel 1
2
: Source 1
: Gate 1
7, 8 : Drain 1
FEATURES
? Low on-state resistance
N-channel R DS(on)1 = 28 m Ω MAX. (V GS = 10 V, I D = 3 A)
P-channel 3 : Source 2
4 : Gate 2
5, 6 : Drain 2
6.0 ±0.3
R DS(on)2 = 40 m Ω MAX. (V GS = 4.5 V, I D = 3 A)
P-channel R DS(on)1 = 60 m Ω MAX. (V GS = ? 10 V, I D = ? 3 A)
R DS(on)2 = 80 m Ω MAX. (V GS = ? 4.5 V, I D = ? 3 A)
? Low input capacitance
1
5.37 Max.
1.27
4
0.6
4.0
0.5 ±0.2
1.0
0.10
0.40 –0.05
N-channel C iss = 500 pF TYP.
+0.11
0.12 M
P-channel C iss = 460 pF TYP.
? Built-in gate protection diode
EQUIVALENT CIRCUITS
? Small and surface mount package (Power SOP8)
ORDERING INFORMATION
N-channel
Drain
Body
P-channel
Drain
Body
PART NUMBER
μ PA2790GR
PACKAGE
Power SOP8
Gate
Gate
Protection
Diode
Source
Diode
Gate
Gate
Protection
Diode
Source
Diode
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16954EJ3V0DS00 (3rd edition)
Date Published September 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
2004
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
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